PART |
Description |
Maker |
2SA1252 |
High VEBO. Wide ASO and high durability against breakdown.
|
TY Semiconductor Co., Ltd
|
EC3202C |
High-Gain High-VEBO Transistors Muting Circuit Applications From old datasheet system
|
SANYO[Sanyo Semicon Device]
|
WP06R WP06R12D05 WP06R12D12 WP06R12D15 WP06R12S05 |
High Density 5-6 Watt Wide Input Range DC/DC Converter 5-6 WATT HIGH DENSITY, WIDE INPUT RANGE DC/DC CONVERTER 5-6 WATT HIGH DENSITY/ WIDE INPUT RANGE DC/DC CONVERTER RECTIFIER SCHOTTKY SINGLE 2A 40V 50A-Ifsm 0.55Vf 0.5A-IR PowerDI-123 3K/REEL
|
CANDD[C&D Technologies]
|
651-102-21 651-105-21 651-105-211309 651-105-23 65 |
high performance panel lamps Colour diffused lens with a wide viewing angle Suitable for high vibration applications
|
Marl International Limited Marl International Limi...
|
HLMP-V500 HLMA-QL00 HLMA-VH00 HLMA-VL00 HLMP-V100 |
T-13/4 (5 mm), Wide Viewing Angle, High Intensity LED Lamps Subminiature High Performance AlInGaP LED Lamps 2.5 X 7.4 mm RECTANGULAR SOLID STATE LAMPS T-13/4 (5 mm)/ Wide Viewing Angle/ High Intensity LED Lamps
|
http:// Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)] Fairchild Semiconductor
|
BCX52-10 BCX52-16 BCX51 BCX51-10 BCX53-10 |
High current (max. 1 A). Low voltage (max. 80 V). Emitter-base voltage VEBO -5 V
|
TY Semiconductor Co., Ltd
|
ASI10599 HF100-12 |
NPN Silicon RF Power Transistor(Ic:20 A,Vcbo: 36 V,Vceo: 18 V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:20 A,Vcbo: 36 V,Vceo: 18 V,Vebo: 4.0 V))
|
Advanced Semiconductor, Inc.
|
K4H510738E-TC/LAA K4H510738E-TC/LB0 K4H510738E-TC/ |
Dual Wide Bandwidth High Output Drive Single Supply Op Amp 8-MSOP-PowerPAD -40 to 125 堆叠12Mb电子芯片DDR SDRAM内存规格(x4/x8 Dual Wide Bandwidth High Output Drive Single Supply Op Amp 8-SOIC -40 to 125 Stacked 512Mb E-die DDR SDRAM Specification (x4/x8)
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
HF50-12F |
NPN Silicon RF Power Transistor(Ic:12.0A,Vcbo: 36 V,Vceo: 18 V,Vebo: 3.5 V)(NPN 硅型射频功率晶体Ic:12.0A,Vcbo: 36 V,Vceo: 18 V,Vebo: 3.5 V)) HF BAND, Si, NPN, RF POWER TRANSISTOR NPN Silicon RF Power Transistor(Ic:12.0A,Vcbo: 36 V,Vceo: 18 V,Vebo: 3.5 V)(NPN 纭??灏??????朵?绠?Ic:12.0A,Vcbo: 36 V,Vceo: 18 V,Vebo: 3.5 V))
|
Advanced Semiconductor, Inc. ADVANCED SEMICONDUCTOR INC
|
ASI10652 TVU150 |
14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator UHF BAND, Si, NPN, RF POWER TRANSISTOR NPN Silicon RF Power Transistor(Ic:25A,Vcbo: 28 V,Vceo: 60 V,Vebo: 3.5 V)(NPN 硅型射频功率晶体Ic:25A,Vcbo: 28 V,Vceo: 60 V,Vebo: 3.5 V))
|
Advanced Semiconductor, Inc. ASI[Advanced Semiconductor]
|
ASI10730 VHB50-28S |
NPN Silicon RF Power Transistor(Ic:6.5 A,Vcbo: 65 V,Vceo: 35 V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:6.5 A,Vcbo: 65 V,Vceo: 35 V,Vebo: 4.0 V)) VHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Semiconductor, Inc. ASI[Advanced Semiconductor]
|